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Other articles related with "resistive switching"：
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17303 |
Xianglin Huang(黄香林), Ying Wang(王英), Huixiang Huang(黄慧香), Li Duan(段理), and Tingting Guo(郭婷婷) |
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Resistive switching behavior and mechanism of HfOx films with large on/off ratio by structure design |
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Chin. Phys. B
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97302 |
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Resistive switching properties of SnO2 nanowires fabricated by chemical vapor deposition |
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Chin. Phys. B
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67505 |
Yuan Yuan(袁源), Lu-Jun Wei(魏陆军), Yu Lu(卢羽), Ruo-Bai Liu(刘若柏), Tian-Yu Liu(刘天宇), Jia-Rui Chen(陈家瑞), Biao You(游彪), Wei Zhang(张维), Di Wu(吴镝), and Jun Du(杜军) |
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Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization |
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Chin. Phys. B
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[Abstract]
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47303 |
Z W Liang(梁正伟), P Wu(吴平), L C Wang(王利晨), B G Shen(沈保根), and Zhi-Hong Wang(王志宏) |
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Conductive path and local oxygen-vacancy dynamics: Case study of crosshatched oxides |
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Chin. Phys. B
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[Abstract]
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118701 |
Jin-Long Jiao(焦金龙), Qiu-Hong Gan(甘秋宏), Shi Cheng(程实), Ye Liao(廖晔), Shao-Ying Ke(柯少颖), Wei Huang(黄巍), Jian-Yuan Wang(汪建元), Cheng Li(李成), and Song-Yan Chen(陈松岩) |
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Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device |
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Chin. Phys. B
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[Abstract]
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116105 |
Jia-Ning Liu(刘嘉宁), Feng-Xiang Chen(陈凤翔), Wen Deng(邓文), Xue-Ling Yu(余雪玲), and Li-Sheng Wang(汪礼胜) |
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Optically-controlled resistive switching effectsof CdS nanowire memtransistor |
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Chin. Phys. B
2021 Vol.30 (11): 116105-116105
[Abstract]
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58702 |
Xiao-Xin Xu(许晓欣), Qing Luo(罗庆), Tian-Cheng Gong(龚天成), Hang-Bing Lv(吕杭炳), Qi Liu(刘琦), and Ming Liu(刘明) |
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Resistive switching memory for high density storage and computing |
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Chin. Phys. B
2021 Vol.30 (5): 58702-058702
[Abstract]
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47301 |
Yue Ning(宁玥), Yunfeng Lai(赖云锋), Jiandong Wan(万建栋), Shuying Cheng(程树英), Qiao Zheng(郑巧), and Jinling Yu(俞金玲) |
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Implementation of synaptic learning rules by TaOx memristors embedded with silver nanoparticles |
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Chin. Phys. B
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47302 |
Zhuang-Zhuang Li(李壮壮), Zi-Yang Yan(严梓洋), Jia-Qi Xu(许嘉琪), Xiao-Han Zhang(张晓晗), Jing-Bo Fan(凡井波), Ya Lin(林亚), and Zhong-Qiang Wang(王中强) |
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Flexible and degradable resistive switching memory fabricated with sodium alginate |
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Chin. Phys. B
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16103 |
Li-Ping Fu(傅丽萍), Xiao-Qiang Song(宋小强), Xiao-Ping Gao(高晓平), Ze-Wei Wu(吴泽伟), Si-Kai Chen(陈思凯), and Ying-Tao Li(李颖弢) |
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TiOx-based self-rectifying memory device for crossbar WORM memory array applications |
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Chin. Phys. B
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97305 |
Rui Yang(杨蕊) |
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Review of resistive switching mechanisms for memristive neuromorphic devices |
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Chin. Phys. B
2020 Vol.29 (9): 97305-097305
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126801 |
Jia-Jia Zhao(赵佳佳), Jin-Shuai Zhang(张金帅), Feng Zhang(张锋), Wei Wang(王威), Hai-Rong He(何海蓉), Wang-Yang Cai(蔡汪洋), Jin Wang(王进) |
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Electro-optical dual modulation on resistive switching behavior in BaTiO3/BiFeO3/TiO2 heterojunction |
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Chin. Phys. B
2019 Vol.28 (12): 126801-126801
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47304 |
Xian-Wen Sun(孙献文), Cai-Hong Jia(贾彩虹), Xian-Sheng Liu(刘献省), Guo-Qiang Li(李国强), Wei-Feng Zhang(张伟风) |
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Bias polarity-dependent unipolar switching behavior in NiO/SrTiO3 stacked layer |
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Chin. Phys. B
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27104 |
Hao-Nan Liu(刘浩男), Xiao-Xia Suo(索晓霞), Lin-Ao Zhang(张林奥), Duan Zhang(张端), Han-Chun Wu(吴汉春), Hong-Kang Zhao(赵宏康), Zhao-Tan Jiang(江兆潭), Ying-Lan Li(李英兰), Zhi Wang(王志) |
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Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures |
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Chin. Phys. B
2018 Vol.27 (2): 27104-027104
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33201 |
Chunsen Liu(刘春森), David Wei Zhang(张卫), Peng Zhou(周鹏) |
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Atomic crystals resistive switching memory |
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Chin. Phys. B
2017 Vol.26 (3): 33201-033201
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38501 |
Xue-Feng Wang(王雪峰), Hai-Ming Zhao(赵海明), Yi Yang(杨轶), Tian-Ling Ren(任天令) |
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Graphene resistive random memory–the promising memory device in next generation |
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Chin. Phys. B
2017 Vol.26 (3): 38501-038501
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127303 |
Han-Lu Ma(马寒露), Zhong-Qiang Wang(王中强), Hai-Yang Xu(徐海阳), Lei Zhang(张磊), Xiao-Ning Zhao(赵晓宁), Man-Shu Han(韩曼舒), Jian-Gang Ma(马剑钢), Yi-Chun Liu(刘益春) |
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Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments |
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Chin. Phys. B
2016 Vol.25 (12): 127303-127303
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117306 |
Tingting Tan(谭婷婷), Tingting Guo(郭婷婷), Zhihui Wu(吴志会), Zhengtang Liu(刘正堂) |
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Charge transport and bipolar switching mechanismin a Cu/HfO2/Pt resistive switching cell |
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Chin. Phys. B
2016 Vol.25 (11): 117306-117306
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106102 |
Xiao-Ping Gao(高晓平), Li-Ping Fu(傅丽萍), Chuan-Bing Chen(陈传兵), Peng Yuan(袁鹏), Ying-Tao Li(李颖弢) |
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Self-compliance multilevel storage characteristic in HfO2-based device |
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Chin. Phys. B
2016 Vol.25 (10): 106102-106102
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58501 |
Wu Hua-Qiang (吴华强), Wu Ming-Hao (吴明昊), Li Xin-Yi (李辛毅), Bai Yue (白越), Deng Ning (邓宁), Yu Zhi-Ping (余志平), Qian He (钱鹤) |
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Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices |
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Chin. Phys. B
2015 Vol.24 (5): 58501-058501
[Abstract]
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37101 |
Wang Zhi-Qiang (王志强), Yan Zhi-Bo (颜志波), Qin Ming-Hui (秦明辉), Gao Xing-Sen (高兴森), Liu Jun-Ming (刘俊明) |
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Dynamic resistive switching in a three-terminal device based on phase separated manganites |
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Chin. Phys. B
2015 Vol.24 (3): 37101-037101
[Abstract]
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127301 |
Zhao Jing (赵晶), Dong Jing-Yu (董静雨), Ren Shu-Xia (任书霞), Zhang Li-Yong (张礼勇), Zhao Xu (赵旭), Chen Wei (陈伟) |
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First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory |
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Chin. Phys. B
2014 Vol.23 (12): 127301-127301
[Abstract]
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126101 |
M. Ismail, M. W. Abbas, A. M. Rana, I. Talib, E. Ahmed, M. Y. Nadeem, T. L. Tsai, U. Chand, N. A. Shah, M. Hussain, A. Aziz, M. T. Bhatti |
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Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device |
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Chin. Phys. B
2014 Vol.23 (12): 126101-126101
[Abstract]
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117305 |
Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Gao Hai-Xia (高海霞), Yang Ha-Ni (杨哈妮), Wang Guo-Ming (王国明), Long Shi-Bing (龙世兵), Ma Xiao-Hua (马晓华), Liu Ming (刘明) |
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Resistive switching characteristics of Ti/ZrO2/Pt RRAM device |
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Chin. Phys. B
2014 Vol.23 (11): 117305-117305
[Abstract]
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38404 |
Huang Da (黄达), Wu Jun-Jie (吴俊杰), Tang Yu-Hua (唐玉华) |
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Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor |
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Chin. Phys. B
2014 Vol.23 (3): 38404-038404
[Abstract]
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[HTML 1 KB]
[PDF 287 KB]
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27702 |
Zhang Fei (张飞), Lin Yuan-Bin (林远彬), Wu Hao (吴昊), Miao Qing (苗青), Gong Ji-Jun (巩纪军), Chen Ji-Pei (陈继培), Wu Su-Juan (吴素娟), Zeng Min (曾敏), Gao Xing-Sen (高兴森), Liu Jun-Ming (刘俊明) |
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Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films |
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Chin. Phys. B
2014 Vol.23 (2): 27702-027702
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117314 |
Xu Ding-Lin (许定林), Xiong Ying (熊颖), Tang Ming-Hua (唐明华), Zeng Bai-Wen (曾柏文), Xiao Yong-Guang (肖永光), Wang Zi-Ping (王子平) |
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Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO3 thin films |
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Chin. Phys. B
2013 Vol.22 (11): 117314-117314
[Abstract]
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107702 |
Yuan Xue-Yong (袁学勇), Luo Li-Rong (罗丽荣), Wu Di (吴迪), Xu Qing-Yu (徐庆宇) |
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Bipolar resistive switching in BiFe0.95Zn0.05O3 films |
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Chin. Phys. B
2013 Vol.22 (10): 107702-107702
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97101 |
Zhang Kai-Liang (张楷亮), Liu Kai (刘凯), Wang Fang (王芳), Yin Fu-Hong (尹富红), Wei Xiao-Ying (韦晓莹), Zhao Jin-Shi (赵金石) |
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Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory |
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Chin. Phys. B
2013 Vol.22 (9): 97101-097101
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77308 |
Wang Ying (王颖), Yang Ting (杨汀), Xie Ji-Peng (谢吉鹏), Lü Wen-Li (吕文理), Fan Guo-Ying (范国莹), Liu Su (刘肃) |
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Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex：Mechanism and non-volatile memory application |
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Chin. Phys. B
2013 Vol.22 (7): 77308-077308
[Abstract]
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38401 |
Huang Da (黄达), Wu Jun-Jie (吴俊杰), Tang Yu-Hua (唐玉华) |
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Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory |
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Chin. Phys. B
2013 Vol.22 (3): 38401-038401
[Abstract]
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37201 |
Wei Xiao-Ying (韦晓莹), Hu Ming (胡明), Zhang Kai-Liang (张楷亮), Wang Fang (王芳), Zhao Jin-Shi (赵金石), Miao Yin-Ping (苗银萍) |
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Analysis of resistive switching behaviors of vanadium oxide thin film |
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Chin. Phys. B
2013 Vol.22 (3): 37201-037201
[Abstract]
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65201 |
Zhao Jian-Wei(赵建伟), Liu Feng-Juan(刘凤娟), Huang Hai-Qin(黄海琴), Hu Zuo-Fu(胡佐富), and Zhang Xi-Qing(张希清) |
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The effects of substrate temperature on ZnO-based resistive random access memory devices |
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Chin. Phys. B
2012 Vol.21 (6): 65201-065201
[Abstract]
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17305 |
Li Ying-Tao(李颖弢), Long Shi-Bing(龙世兵), Lü Hang-Bing(吕杭炳), Liu Qi(刘琦), Wang Qin(王琴), Wang Yan(王艳), Zhang Sen(张森), Lian Wen-Tai(连文泰), Liu Su(刘肃), and Liu Ming(刘明) |
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Investigation of resistive switching behaviours in WO3-based RRAM devices |
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Chin. Phys. B
2011 Vol.20 (1): 17305-017305
[Abstract]
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